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PBSS5360X - PNP transistor

General Description

PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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PBSS5360X 60 V, 3 A PNP low VCEsat (BISS) transistor 3 July 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360X 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • DC-to-DC conversion • Supply line switches • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1.