Datasheet Summary
60 V, 3 A PNP low VCEsat (BISS) transistor
3 July 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4360X
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- DC-to-DC conversion
- Supply line switches
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and...