PESD5V0S2BT Datasheet (Low capacitance bidirectional double ESD protection diode)

Part: PESD5V0S2BT
Manufacturer: Nexperia
Size: 199.56 KB

PESD5V0S2BT Key Features

Bidirectional ESD protection of two lines
Low diode capacitance
Max. peak pulse power: PPPM = 130 W at tp = 8/20 µs
Low clamping voltage: VCL = 14 V at IPPM = 12 A
Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
AEC-Q101 qualified

Other PESD5V0S2BT Datasheets

Manufacturer	Part Number	Description
NXP Semiconductors	PESD5V0S2BT	Low Capacitance Bi-directional Double Esd Protection Diode
NXP Semiconductors	PESD5V0S2UAT	Double ESD protection diodes in SOT23 package
NXP Semiconductors	PESD5V0S2UQ	(PESDxS2UQ) Double Esd Protection Diode

View all PESD5V0S2BT datasheets →

PESD5V0S2BT Description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients.