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PHB32N06LT - N-channel MOSFET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Suitable for logic level gate drive sources 1.3.

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Full PDF Text Transcription

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PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 — 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Suitable for logic level gate drive sources 1.3 Applications „ General purpose switching „ Switched-mode power supplies 1.4 Quick reference data Table 1.
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