PHKD13N03LT fet equivalent, dual n-channel trenchmos logic level fet.
* Low conduction losses due to low on-state resistance
* Simple gate drive required due to low gate charge
* Suitable for high frequency applications due to .
only.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Simple gate drive requ.
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Fe.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 776.66KB)