PMDPB56XNEA Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDPB56XNEA Key Features
- Trench MOSFET technology
- Low threshold voltage
- Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
- Tin-plated 100 % solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- AEC-Q101 qualified