PMDPB80XP Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDPB80XP Key Features
- 1.8 V RDSon rated for low voltage gate drive
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
PMDPB80XP Applications
- Charging switch for portable devices