Datasheet4U Logo Datasheet4U.com

PMGD175XNE - dual N-channel MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

📁 Similar Datasheet

  • PMGD175XN - MOSFET (NXP)
  • PMGD130UN - dual N-channel Trench MOSFET (NXP)
  • PMGD280UN - Dual N-channel mTrenchMOS ultra low level FET (NXP Semiconductors)
  • PMGD290UCEA - 725 / 500 mA N/P-channel Trench MOSFET (NXP)
  • PMGD290XN - Dual N-channel mTrenchMOS extremely low level FET (NXP Semiconductors)
  • PMGD370XN - Dual N-channel extremely low level FET (Philips)
  • PMGD400UN - Dual N-channel uTrenchMOS ultra low level FET (NXP)
  • PMGD780SN - Dual N-channel mTrenchMOS standard level FET (NXP Semiconductors)
  • PMGD8000LN - Dual UTrenchMOS logic level FET (NXP Semiconductors)
  • PMG370XN - N-channel mTrenchMOS extremely low level FET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
Published: |