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PMN48XP - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low RDSon.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Full PDF Text Transcription

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PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low RDSon  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C -- -12 - [1] - - -20 V 12 V -4.1 A RDSon drain-source on-state VGS = -4.
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