Datasheet4U Logo Datasheet4U.com

PMPB13XNE - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • 1 kV ESD protection.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated, 100% solderable side pads for optical solder inspection 3.

📥 Download Datasheet

📁 Similar Datasheet

  • PMPB13XNE - single N-channel Trench MOSFET (NXP)
  • PMPB10XNE - single N-channel Trench MOSFET (NXP)
  • PMPB11EN - 30V N-channel Trench MOSFET (NXP)
  • PMPB12UN - 20V single N-channel Trench MOSFET (NXP Semiconductors)
  • PMPB15XN - single N-channel Trench MOSFET (NXP Semiconductors)
  • PMPB15XP - single P-channel Trench MOSFET (NXP)
  • PMPB16XN - single N-channel Trench MOSFET (NXP)
  • PMPB19XP - single P-channel Trench MOSFET (NXP)
  • PMPB20EN - 30V N-channel Trench MOSFET (NXP)
  • PMPB20UN - single N-channel Trench MOSFET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMPB13XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1.
Published: |