PMPB29XPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMPB29XPE Key Features
- 2.3 kV ESD protected
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection
PMPB29XPE Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices