Datasheet4U Logo Datasheet4U.com

PMV280ENEA - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2).
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Full PDF Text Transcription for PMV280ENEA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMV280ENEA. For precise diagrams, and layout, please refer to the original PDF.

PMV280ENEA 100 V, N-channel Trench MOSFET 11 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2...

View more extracted text
channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.

More Datasheets from Nexperia

Part Number Description
PMV28ENE N-channel MOSFET
PMV28ENEA N-channel MOSFET
PMV28UNEA N-channel MOSFET
PMV28XPEA P-channel MOSFET
PMV20EN N-Channel MOSFET
PMV20XNE N-channel MOSFET
PMV20XNEA N-channel MOSFET
PMV213SN N-channel FET
PMV230ENEA N-channel Trench MOSFET
PMV240SP P-channel MOSFET