PMV28ENEA Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMV28ENEA Key Features
- Logic-level patible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C)
- AEC-Q101 qualified