PMV28XPEA
PMV28XPEA is P-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Extended temperature range Tj = 175 °C
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 1 k V HBM (class H1C)
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -5 A; Tj = 25 °C
Min Typ Max
- -
-20
-12
- 12
[1]
- -
-5
- 30
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A mΩ
Nexperia
5. Pinning...
