Datasheet4U Logo Datasheet4U.com

PMXB43UNE - N-Channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density.
  • 1 kV ESD protected 3.

📥 Download Datasheet

Full PDF Text Transcription for PMXB43UNE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMXB43UNE. For precise diagrams, and layout, please refer to the original PDF.

PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless...

View more extracted text
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density • 1 kV ESD protected 3. Applications • Low-side load switch and charging switch for portable devices • Power management in battery-driven portables • LED driver • DC-to-DC converters 4. Quick refer