PMXB65ENE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMXB65ENE Key Features
- Trench MOSFET technology
- Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection 1 kV
- Very low Drain-Source on-state resistance RDSon = 44 mΩ
PMXB65ENE Applications
- Low-side load switch and charging switch for portable devices
- Power management in battery-driven portables