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PMZ290UNE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3.

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Full PDF Text Transcription for PMZ290UNE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMZ290UNE. For precise diagrams, and layout, please refer to the original PDF.

PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra...

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nel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.

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