PMZB370UNE Datasheet, nexperia

* Very fast switching
* Trench MOSFET technology
* Low threshold voltage
* Ultra thin package profile with 0.37 mm height
* ESD protection up to 2 kV.

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* Very fast switching
* Trench MOS.