Full PDF Text Transcription for PMZB670UPE (Reference)
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PMZB670UPE 20 V, single P-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effe...
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profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37 mm 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1.