PSMN011-60HL
PSMN011-60HL is N-channel MOSFET manufactured by Nexperia.
description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using Trench MOS technology.
2. Features and benefits
- Dual MOSFET
- Repetitive avalanche rated
- High reliability LFPAK56D package
- Copper-clip, solder die attach
- Qualified to 175 °C
3. Applications
- Brushless DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
- High performance and high efficiency server power supply
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
- ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
- Ptot total power dissipation Tmb = 25 °C; Fig. 1
- Tj junction temperature
-55
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
- resistance
VGS = 5 V; ID = 15 A; Tj = 175 °C;
- Fig. 11; Fig. 12
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 5 V;
- QG(tot) total gate charge
Tj = 25 °C; Fig. 13; Fig. 14
- Avalanche Ruggedness FET1 and FET2
EDS(AL)S non-repetitive drainsource avalanche energy
ID = 35 A; Vsup ≤ 60 V; VGS = 5 V; Tj(init) = 25 °C; Fig. 4
[2]...
