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PSMN016-100YS - N-channel MOSFET

Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power converters.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

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Full PDF Text Transcription

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PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power converters  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1.
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