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PSMN018-100PSF - N-channel MOSFET

General Description

NextPower 100 V standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial & consumer applications.

2.

Key Features

  • Optimised for fast switching, low spiking, high efficiency.
  • Low QG x RDSon FOM for high efficiency switching.

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Full PDF Text Transcription for PSMN018-100PSF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN018-100PSF. For precise diagrams, and layout, please refer to the original PDF.

PSMN018-100PSF NextPower 100 V, 18 mΩ N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive ...

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heet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits • Optimised for fast switching, low spiking, high efficiency • Low QG x RDSon FOM for high efficiency switching applications • Low body diode losses (Qrr) and fast recovery (trr) • Strong avalanche energy rating (EAS) • Avalanche rated & 100% tested • Ha-free & RoHS compliant TO220 package 3.