PSMN0R9-30ULD Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
PSMN0R9-30ULD Key Features
- Improved creepage and clearance
- meets the requirements of UL2595
- 300 A capability
- Avalanche rated, 100% tested at IAS = 190 A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance