Datasheet Details
| Part number | PSMN1R0-30YLD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 304.00 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN1R0-30YLD Datasheet
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General Description
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
Key Features
- 300 Amp capability.
- Avalanche rated, 100 % tested at I(as) = 190 Amps.
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
- Superfast switching with soft-recovery; s-factor > 1.
- Low spiking and ringing for low EMI designs.
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
- Optimised for 4.5 V gate drive.
- Low parasitic inductance and resista.
