PSMN1R0-30YLD - N-channel MOSFET

Name: PSMN1R0-30YLD
SKU: PSMN1R0-30YLD-1388821

nexperia

Datasheet Details

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

300 Amp capability.
Avalanche rated, 100 % tested at I(as) = 190 Amps.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resista.

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Published: Jul 5, 2019 |