* High reliability Power SO8 package, qualified to 175°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 1.3 A
PSMN1R1-25YLC Datasheet (947.55 KB)
PSMN1R1-25YLC
947.55 KB
N-channel mosfet.
PSMN1R1-25YLC N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Prod.
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