PSMN1R2-30YLD Datasheet - nexperia

N-channel MOSFET

PSMN1R2-30YLD Features

* 250 A capability

* Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

* Superfast switching with soft-recovery; s-factor > 1

* Low spiking and ringing for low EMI designs

* Unique “SchottkyPlus” technology; Scho

PSMN1R2-30YLD General Description

250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but with.

PSMN1R2-30YLD Datasheet (298.08 KB)

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PSMN1R2-30YLD

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nexperia ↗

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298.08 KB

Description:

N-channel mosfet.
PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 December 2018 Product data sheet 1. Gen.

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PSMN1R2-30YLD N-channel MOSFET nexperia

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PSMN1R2-30YLD Features

PSMN1R2-30YLD General Description

Datasheet Details

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PSMN1R2-30YLD Distributor