PSMN1R5-50YLH
Description
200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package.
Key Features
- 200 A continuous current capability
- Optimised for 36 V (nominal) battery powered applications
- LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy
- Copper-clip and solder die attach for low package inductance and resistance, and high ID (max)
- Qualified to 175 °C
- Avalanche rated, 100% tested
- Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
- Superfast switching with soft body-diode recovery for low-spiking and ringing, remended for
- Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
- Narrow VGS(th) rating for easy paralleling and improved current sharing
Applications
- General description
