• Part: PSMN2R9-100SSE
  • Description: N-channel MOSFET
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 332.28 KB
Download PSMN2R9-100SSE Datasheet PDF
Nexperia
PSMN2R9-100SSE
PSMN2R9-100SSE is N-channel MOSFET manufactured by Nexperia.
description N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R9-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R9-100SSE plements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. 2. Features and benefits - Fully optimized Safe Operating Area (SOA) for superior linear mode operation - Low RDSon for low I2R conduction losses - LFPAK88 package for applications that demand the highest performance and reliability 3. Applications - Hot swap - Load switch - Soft start - E-fuse - Telemunication systems based on a 48 V backplane/supply rail 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 ID = 25 A; VDS = 50 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 210 A - - 341 W -55 - 175 °C - 2.3 2.9...