PSMN5R0-80BS Datasheet | Nexperia

description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped Min -55 - - - [1] Continuous current is limited by package Typ Max Unit - 80 V - 100 A - 270 W - 175 °C 7.19 8.5 4.36 5.1 mΩ mΩ 21 101 - n C n...