PSMN6R0-25YLD Datasheet N-channel MOSFET

Manufacturer: Nexperia

PSMN6R0-25YLD n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PSMN6R0-25YLD
Manufacturer	Nexperia
File Size	715.19 KB
Description	N-channel MOSFET
Download	PSMN6R0-25YLD Download (PDF)

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Overview

PSMN6R0-25YLD N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1.

Key Features

Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resist.

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