PSMN6R0-30YLD Datasheet N-channel MOSFET

Manufacturer: Nexperia

PSMN6R0-30YLD n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PSMN6R0-30YLD
Manufacturer	Nexperia
File Size	741.14 KB
Description	N-channel MOSFET
Download	PSMN6R0-30YLD Download (PDF)

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Overview

PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1.

Key Features

Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and res.

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