PXN2R8-100RL Datasheet | Nexperia

description General purpose MOSFET for standard applications, 184 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package. 2. Features and benefits - Logic level patibility - Trench MOSFET technology - Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint) 3. Applications - Secondary side synchronous rectification - DC-to-DC converters - Home appliance - Motor drive - Load switching - LED lighting - E-bike 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 9 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 9 ID = 25 A; VDS = 50 V; VGS = 4.5 V; Tj = 25 °C; Fig. 11; Fig. 12 ID = 20.2 A; Vsup ≤ 100 V; VGS = 10 V; [1] Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 184 A - - 181...