onsemi 1N458A
The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
| Part No. |
1N458A |
| Datasheet |
1N458A
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| Manufacturer |
 onsemi |
| Description |
Small Signal Diode |
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Rating Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 150 V 500 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the MAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These ratings are based on a maximum junction temperature of 200°C. 3. These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS Symbol Parameter Max Unit PD Power Dissipation 500 mW RqJA Thermal Resistance, Junction t...
