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AFGB20N60SFD-BW Datasheet PDF

onsemi AFGB20N60SFD-BW

This document contains information on a product under development.
Part No. AFGB20N60SFD-BW
Datasheet AFGB20N60SFD-BW Download
Manufacturer
onsemi
Description IGBT
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AFGB20N60SFD-BW datasheet page 1 preview

GENERAL DESCRIPTION

Using novel field−stop IGBT technology, ON Semiconductor’s new series of field−stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

FEATURES

● High Current Capability
● Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
● High Input Impedance
● Fast Switching
● AEC−Q101 Qualified to Automotive Requirements
● These Devices are Pb−Free and are RoHS Compliant Typical

APPLICATIONS

● Inverters, SMPS, PFC, UPS
● Automotive Chargers, Converters, High Voltage Auxiliaries

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 1) Diode Forward Current (TC = 25°C) Diode Forward Current (TC = 100°C) Pulsed Diode Maximum Forward Current (Note 1) VCES 600 V VGES ±20 V IC 40 A 20 A ICM 60 A IF 20 A 1...
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