onsemi AFGHL40T65SQD
IGBT
| Part No. | AFGHL40T65SQD |
|---|---|
| Datasheet | AFGHL40T65SQD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● AEC−Q101 Qualified● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A
● 100% of the Parts are Tested for ILM (Note 2)
● Fast Switching
● Tight Parameter Distribution
● RoHS Compliant Typical
APPLICATIONS
● Automotive HEV−EV Onboard Chargers● Automotive HEV−EV DC−DC Converters
● Totem Pole Bridgeless PFC
● PTC
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 80 A @ TC = 100°C 40 Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current @ TC < 25°C IF 80 A (Note 1) @ TC < 100°C 20 Pulsed Diode Maximum Forward Current IFM(2) 160 A Maximum Power Dissipation @ TC = 25°C PD 238 W @ TC = 100°C 119 Operating Junction / Storage Temperature Range...
