onsemi AFGHL50T65SQ
IGBT
FEATURES
● AEC−Q101 Qualified● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
● 100% of the Parts are Tested for ILM (Note 2)
● Fast Switching
● Tight Parameter Distribution
● RoHS Compliant Typical
APPLICATIONS
● Automotive HEV−EV Onboard Chargers● Automotive HEV−EV DC−DC Converters
● Totem Pole Bridgeless PFC
● PTC
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 650 ±20 ±30 V V Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Collector Current (Note 3) Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range IC 80 50 ILM 200 ICM 200 PD 268 134 TJ, TSTG −55 to +175 A A A W °C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds TL 300 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.