onsemi AFGHL50T65SQDC
Hybrid IGBT
| Part No. | AFGHL50T65SQDC |
|---|---|
| Datasheet | AFGHL50T65SQDC Download |
| Manufacturer |  onsemi |
| Description | Hybrid IGBT |
| Buy | Stock & Price |
FEATURES
● AEC−Q101 Qualified● Maximum Junction Temperature : TJ = 175C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A
● Fast Switching
● Tighten Parameter Distribution
● No Reverse Recovery/No Forward Recovery Typical
APPLICATIONS
● Automotive● On & Off Board Chargers
● DC−DC Converters
● PFC
● Industrial Inverter
MAXIMUM RATINGS
Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES 20 V 30 Collector Current @TC = 25C @TC = 100C IC 100 A 50 Pulsed Collector Current (Note 1) ILM 200 A Pulsed Collector Current (Note 2) ICM 200 A Diode Forward Current @TC = 25C IF 40 A @TC = 100C 20 Pulsed Diode Maximum Forward Current IFM 200 A Maximum Power Dissipation @TC = 25C @TC = 100C PD 238 W 119 Operating Junction / Storage Temperature Range TJ, TSTG 55 to C +175 Maximum Lead Temp. for Soldering Purposes, 1/8● from case for 5 seconds TL 300 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
