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AFGHL75T65SQDT Datasheet PDF

onsemi AFGHL75T65SQDT

650V 75A Field Stop Trench IGBT

Part No. AFGHL75T65SQDT
Datasheet AFGHL75T65SQDT Download
Manufacturer
onsemi
Description 650V 75A Field Stop Trench IGBT
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AFGHL75T65SQDT datasheet page 1 preview

FEATURES

● AEC−Q101 Qualified
● Maximum Junction Temperature: TJ = 175C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
● 100% of the Parts are Tested for ILM (Note 2)
● Fast Switching
● Tight Parameter Distribution
● RoHS Compliant Typical

APPLICATIONS

● Automotive HEV−EV Onboard Chargers
● Automotive HEV−EV DC−DC Converters
● Totem Pole Bridgeless PFC

MAXIMUM RATINGS

Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES 20 V 30 Collector Current (Note 1) @ TC = 25C @ TC = 100C Pulsed Collector Current (Note 2) Pulsed Collector Current (Note 3) Diode Forward Current @ TC = 25C @ TC = 100C Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C @ TC = 100C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8● from case for 5 seconds IC 80 A 75...
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