onsemi BAT54AWT1G
Schottky Barrier Diodes
| Part No. | BAT54AWT1G |
|---|---|
| Datasheet | BAT54AWT1G Download |
| Manufacturer |  onsemi |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
FEATURES
● Extremely Fast Switching Speed● Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 200 mW 1.6 mW/°C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF IFSM IFRM 200 Max 600 300 mA mA mA Junction Temperature TJ −55 to 150 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
