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FCH041N65EFLN4 Datasheet PDF

onsemi FCH041N65EFLN4

This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Part No. FCH041N65EFLN4
Datasheet FCH041N65EFLN4 Download
Manufacturer
onsemi
Description N-Channel MOSFET
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FCH041N65EFLN4 datasheet page 1 preview

DESCRIPTION

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

FEATURES

● 700 V @ TJ = 150°C
● Typ. RDS(on) = 36 mW
● Ultra Low Gate Charge (Typ. Qg = 229 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
● 100% Avalanche Tested
● These Devices are Pb−Free and are RoHS Compliant

APPLICATIONS

● Telecom / Server Power Supplies
● Industrial Power Supplies
● EV Charger
● UPS / Solar VDSS 650 V RDS(ON) MAX 41 mW @ 10 V ID MAX 76 A D G S1: Driver Source S1 S2 S2: Power Source POWER MOSFET D S2 S1G TO−247−4LD CASE 340CW MARKING DIAGRAM $Y&Z&3&K FCH041 N65EFLN4 © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev.
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