onsemi FCHD190N65S3R0
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.DESCRIPTION
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.FEATURES
● 700 V @ TJ = 150°C● Typ. RDS(on) = 159 mW
● Ultra Low Gate Charge (Typ. Qg = 33 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● Computing / Display Power Supplies● Telecom / Server Power Supplies
● Industrial Power Supplies
● Lighting / Charger / Adapter VDSS 650 V RDS(ON) MAX 190 mW @ 10 V ID MAX 17 A D G S POWER MOSFET G D S TO−247AD CASE 340AL MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2019 July, 2019 − Rev. 2 FCHD190 N65S3R0 AYWWG FCHD190N65S3R0 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.