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FCP165N65S3 Datasheet PDF

onsemi FCP165N65S3

This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Part No. FCP165N65S3
Datasheet FCP165N65S3 Download
Manufacturer
onsemi
Description N-Channel MOSFET
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FCP165N65S3 datasheet page 1 preview

DESCRIPTION

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation.

FEATURES

● 700 V @ TJ = 150°C
● Typ. RDS(on) = 140 mW
● Ultra Low Gate Charge (Typ. Qg = 39 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
● 100% Avalanche Tested
● These Devices are Pb−Free and are RoHS Compliant

APPLICATIONS

● Computing / Display Power Supplies
● Telecom / Server Power Supplies
● Industrial Power Supplies
● Lighting / Charger / Adapter VDSS 650 V RDS(ON) MAX 165 mW @ 10 V ID MAX 19 A D G S POWER MOSFET GD S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP 165N65S3 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 $Y &Z &3 &K FCP165N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
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