onsemi FDMS86101DC
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.| Part No. | FDMS86101DC |
|---|---|
| Datasheet | FDMS86101DC Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.FEATURES
● Shielded Gate MOSFET Technology● DUAL COOL Top Side Cooling PQFN package
● Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A
● Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A
● High performance technology for extremely low RDS(on)
● 100% UIL Tested
● RoHS Compliant Typical
APPLICATIONS
● Primary DC−DC MOSFET● Secondary Synchronous Rectifier
● Load Switch DATA SHEET ELECTRICAL CONNECTION S D S D S D G D Pin 1 N-Channel MOSFET DDDD GSS S Pin 1 Top Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG MARKING DIAGRAM ÉÉÉÉ2HÉÉÉÉAYÉÉÉÉWZ 2H = Specific Device Code A = Assembly Location Y = Year W = Work Week Z = Assembly Lot Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 January, 2023 − Rev.
