onsemi FFSH1665A
This Device is Pb−Free and is RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits VRRM 650 V IF 16 A 1.DESCRIPTION
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.FEATURES
● Max Junction Temperature 175°C● Avalanche Rated 81 mJ
● High Surge Current Capacity
● Positive Temperature Coefficient
● Ease of Paralleling
● No Reverse Recovery / No Forward Recovery
● Cathode 2. Anode 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM $Y&Z&3&K FFSH 1665A © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 1 $Y &Z &3 &K FFSH1665A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.