onsemi FGB3056-F085
N-Channel IGBT
| Part No. | FGB3056-F085 |
|---|---|
| Datasheet | FGB3056-F085 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate DriveAPPLICATIONS
Automotive lgnition Coil Driver Circuits Coil On PlugAPPLICATIONS
Package JEDEC TO-263AB D2-Pak GATE EMITTER COLLECTOR (FLANGE)ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = -20mA) ESCIS25 ISCIS = 14.2A, L = 3.0mHy, RGE = 1KΩ TC = 25°C ESCIS150 ISCIS = 10.8A, L = 3.0mHy, RGE = 1KΩ TC = 150°C IC25 Collector Current Continuous, at VGE = 5V, TC = 25°C IC110 VGEM PD Collector Current Continuous, at VGE = 5V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC TC = 25°C TC > 25°C TJ TSTG TL TPKG ESD Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) Reflow soldering according to JESD020C HBM-Elect...
