onsemi FGD2736G3-F085
N-Channel IGBT
| Part No. | FGD2736G3-F085 |
|---|---|
| Datasheet | FGD2736G3-F085 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 270mJ at TJ= 25°C● SCIS Energy = 170mJ at TJ = 150°C
● Logic Level Gate Drive
● RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● Coil On Plug
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ISCIS = 13.4A, L = 3.0mHy, RGE = 1K TC = 25°C ESCIS150 ISCIS = 10.8A, L = 3.0mHy, RGE = 1K TC = 150°C IC25 IC110 VGEM Collector Current Continuous, at TC = 25°C, VGE = 5.0V Collector Current Continuous, at TC = 110°C, VGE = 5.0V Gate to Emitter Voltage Continuous PD TJ TSTG Power Dissipation Total Power Dissipation Derating Operating Junction Temperature Range Storage Junction Temperature Range TC = 25°C TC > 25°C TL TPKG ESD Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) Max Lead Temp for soldering (Package Body for 10s) Electrostatic Discharge Voltage a...
