onsemi FGD3440G2-F085
N-Channel IGBT
| Part No. | FGD3440G2-F085 |
|---|---|
| Datasheet | FGD3440G2-F085 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
APPLICATIONS
SCIS Energy = 335mJ at TJ = 25oC Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On PlugAPPLICATIONS
Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB EC G Symbol G E JEDEC TO-252AA D-Pak GATE G COLLECTOR E (FLANGE) DeviceMAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ESCIS25 Self Clamping Inductive Switching Energy (Note 1) ESCIS150 Self Clamping Inductive Switching Energy (Note 2) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range TSTG Storage Junction Temperature Range TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) TPKG Max.
