onsemi FGD3440G2-F085V
N-Channel IGBT
| Part No. | FGD3440G2-F085V |
|---|---|
| Datasheet | FGD3440G2-F085V Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 335 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 28 V Battery Condition (IC = 10 mA) ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.0 V, TC = 25°C Collector Current Continuous at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature 26.9 25 ±10 166 1.1 −40 to +175 A A V W W/°C °C TSTG Storage Junction Temperature Range −40 to +175 °C TL Max.
