onsemi FGH40N60SMD-F085
This Device is Pb−Free and is RoHS Compliant Applications Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, SMPS, PFC, UPS ABSOLUTE MAXIMUM RATINGS Rating Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current @ TC = 25 C @ TC = 100 C Pulsed Collector Current VCES 600 V VGES 20 V IC A 80 40 ICM 120 A (Note 1) Diode Forward Current @ TC = 25 C @ TC = 100 C IF A 40 20 Pulsed Diode Maximum Forward Current IFM 120 A (Note 1) Maximum Power Dissipation @ TC = 25 C @ TC = 100 C Operating Junction Temperature Storage Temperature Range Maximum...| Part No. | FGH40N60SMD-F085 |
|---|---|
| Datasheet | FGH40N60SMD-F085 Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.FEATURES
● Maximum Junction Temperature: TJ = 175C● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
● High Input Impedance
● Tightened Parameter Distribution
● AEC Qualified and PPAP Capable IGBT: AEC−Q101
● This Device is Pb−Free and is RoHS Compliant
APPLICATIONS
● Automotive Chargers, Converters, High Voltage Auxiliaries● Inverters, SMPS, PFC, UPS
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current @ TC = 25C @ TC = 100C Pulsed Collector Current VCES 600 V VGES 20 V IC A 80 40 ICM 120 A (Note 1) Diode Forward Current @ TC = 25C @ TC = 100C IF A 40 20 Pulsed Diode Maximum Fo...
