onsemi FGH4L40T120LQD
IGBT
| Part No. | FGH4L40T120LQD |
|---|---|
| Datasheet | FGH4L40T120LQD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Extremely Efficient Trench with Field Stop Technology● Maximum Junction Temperature: TJ = 175°C
● Fast and Soft Reverse Recovery Diode
● Optimized for Low VCE(Sat) Typical
APPLICATIONS
● Solar Inverter and UPS● Industrial Switching
● Welding
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage Gate−Emitter Voltage Transient Gate−Emitter Voltage VCE 1200 V VGE ±20 V ±30 Collector Current @ TC = 25°C (Note 1) IC @ TC = 100°C 80 A 40 Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current IF @ TC = 25°C (Note 1) @ TC = 100°C A 80 40 Maximum Power Dissipation PD @ TC = 25°C @ TC = 100°C W 306 153 Operating Junction and Storage Temperature Range TJ, TSTG −55 to °C +175 Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) TL 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
