onsemi FGH4L50T65MQDC50
N-Channel IGBT
| Part No. | FGH4L50T65MQDC50 |
|---|---|
| Datasheet | FGH4L50T65MQDC50 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● Positive Temperature Coefficient for Easy Parallel Operation● High Current Capability
● 100% of the Parts are Tested for ILM (Note 2)
● Smooth and Optimized Switching
● Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
● No Reserved Recovery / No Forward Recovery
● Tight Parameter Distribution
● RoHS Compliant
APPLICATIONS
● Charging Station (EVSE)● Solar Inverter
● UPS, ESS
● PFC, Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Value Collector−to−Emitter Voltage VCES 650 Gate−to−Emitter Voltage VGES ±20 Transient Gate−to−Emitter Voltage ±30 (tp < 0.5 ms, D < 0.001) Collector Current TC = 25°C (Note 1) IC 100 TC = 100°C 50 Power Dissipation TC = 25°C PD 246 TC = 100°C 123 Pulsed Collector Current TC = 25°C (Note 2) ILM 200 TC = 25°C (Note 3) ICM 200 Diode Forward Current TC = 25°C (Note 1) IF 60 TC = 100°C 50 Pulsed Diode Maximum Forward Current TC = 25°C IFM 200 Unit V A W A A A Operating Junction and Storage Temperature Range Max...
